SI1422DH-T1-GE3 - MOSFET N-CH 12V 4A SC70-6

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SI1422DH-T1-GE3

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ABC-SI1422DH-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 12V 4A SC70-6

RoHS-staatus

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1-2 päeva

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spetsifikatsioonid SI1422DH-T1-GE3

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1422DH-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 12V 4A SC70-6

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 4A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 26 mOhm @ 5.1A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 20nC @ 8V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 725pF @ 6V

FET funktsioon : -

Võimsuse hajumine (max) : 1.56W (Ta), 2.8W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-70-6 (SOT-363)

Pakett / kohver : 6-TSSOP, SC-88, SOT-363

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI142 , SI1422D

dokumendid SI1422DH-T1-GE3

andmelehe : SI1422DH-T1-GE3.pdf

Seotud tooted SI1422DH-T1-GE3 Vishay Siliconix

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