RD3S075CNTL1 - NCH 190V 7.5A POWER MOSFET

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RD3S075CNTL1

Sisemine osa number

ABC-RD3S075CNTL1

tootja

Rohm Semiconductor

Lühikirjeldus

NCH 190V 7.5A POWER MOSFET

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

889385 Pieces

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~~USD 0.36803~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RD3S075CNTL1 laos müüa.

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spetsifikatsioonid RD3S075CNTL1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RD3S075CNTL1

tootja : Rohm Semiconductor

kirjeldus : NCH 190V 7.5A POWER MOSFET

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 190V

Praegune - pidev äravool (id) @ 25 ° C : 7.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4V, 10V

Rds sees (max) @ id, Vgs : 336 mOhm @ 3.8A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 30nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1100pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 52W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : RD3S , RD3S07

dokumendid RD3S075CNTL1

andmelehe : RD3S075CNTL1.pdf

Seotud tooted RD3S075CNTL1 Rohm Semiconductor

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