SQ2362ES-T1_GE3 - MOSFET N-CH 60V 4.4A TO236

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SQ2362ES-T1_GE3

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ABC-SQ2362ES-T1_GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 60V 4.4A TO236

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2720781 Pieces

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~~USD 0.120305~~

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ABC Semiconductor on SQ2362ES-T1_GE3 laos müüa.

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spetsifikatsioonid SQ2362ES-T1_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQ2362ES-T1_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 60V 4.4A TO236

seeria : Automotive, AEC-Q101, TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 4.3A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 95 mOhm @ 4.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 550pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 3W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SOT-23-3 (TO-236)

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQ236 , SQ2362E

dokumendid SQ2362ES-T1_GE3

andmelehe : SQ2362ES-T1_GE3.pdf

Seotud tooted SQ2362ES-T1_GE3 Vishay Siliconix

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