HUF75639P3-F102 - MOSFET N-CH 100V 56A TO220-3

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HUF75639P3-F102

Sisemine osa number

ABC-HUF75639P3-F102

tootja

ON Semiconductor

Lühikirjeldus

MOSFET N-CH 100V 56A TO220-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

555135 Pieces

Viide Hind

~~USD 0.58962~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on HUF75639P3-F102 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid HUF75639P3-F102

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : HUF75639P3-F102

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 100V 56A TO220-3

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 56A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 25 mOhm @ 56A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 130nC @ 20V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2000pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 200W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220-3

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : HUF75 , HUF7563

dokumendid HUF75639P3-F102

andmelehe : HUF75639P3-F102.pdf

Seotud tooted HUF75639P3-F102 ON Semiconductor

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