DMT8012LFG-7 - MOSFET N-CH 80V 9.5A PWDI3333-8

Tootja arv

DMT8012LFG-7

Sisemine osa number

ABC-DMT8012LFG-7

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 80V 9.5A PWDI3333-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1426747 Pieces

Viide Hind

~~USD 0.22942~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMT8012LFG-7 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMT8012LFG-7

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMT8012LFG-7

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 80V 9.5A PWDI3333-8

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 9.5A (Ta), 35A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 16 mOhm @ 12A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 34nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1949pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 2.2W (Ta), 30W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerDI3333-8

Pakett / kohver : 8-PowerWDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMT8 , DMT801

dokumendid DMT8012LFG-7

andmelehe : DMT8012LFG-7.pdf

Seotud tooted DMT8012LFG-7 Diodes Incorporated

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