IRLHS6342TRPBF - MOSFET N-CH 30V 8.7A PQFN

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IRLHS6342TRPBF

Sisemine osa number

ABC-IRLHS6342TRPBF

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 30V 8.7A PQFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2763628 Pieces

Viide Hind

~~USD 0.11844~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRLHS6342TRPBF laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRLHS6342TRPBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRLHS6342TRPBF

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 30V 8.7A PQFN

seeria : HEXFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 8.7A (Ta), 19A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 15.5 mOhm @ 8.5A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.1V @ 10µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11nC @ 4.5V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1019pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 2.1W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 6-PQFN (2x2)

Pakett / kohver : 6-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRLH , IRLHS63

dokumendid IRLHS6342TRPBF

andmelehe : IRLHS6342TRPBF.pdf

Seotud tooted IRLHS6342TRPBF Infineon Technologies

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