HGTP10N120BN - IGBT 1200V 35A 298W TO220AB

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HGTP10N120BN

Sisemine osa number

ABC-HGTP10N120BN

tootja

ON Semiconductor

Lühikirjeldus

IGBT 1200V 35A 298W TO220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

366954 Pieces

Viide Hind

~~USD 0.89198~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on HGTP10N120BN laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid HGTP10N120BN

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : HGTP10N120BN

tootja : ON Semiconductor

kirjeldus : IGBT 1200V 35A 298W TO220AB

seeria : -

Osa olek : Not For New Designs

IGBT tüüp : NPT

Pinge - kollektori emitteri jaotus (max) : 1200V

Praegune - koguja (Ic) (maksimaalselt) : 35A

Praegune - koguja impulss (Icm) : 80A

Vce (sees) (max) @ Vge, Ic : 2.7V @ 15V, 10A

Võimsus - max : 298W

Energia vahetamine : 320µJ (on), 800µJ (off)

Sisendi tüüp : Standard

Värava laadimine : 100nC

Td (sisse / välja) @ 25 ° C : 23ns/165ns

Testi seisund : 960V, 10A, 10 Ohm, 15V

Vastupidine taastumisaeg (trr) : -

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Pakett / kohver : TO-220-3

Tarnija seadme pakett : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : HGTP , HGTP10

dokumendid HGTP10N120BN

andmelehe : HGTP10N120BN.pdf

Seotud tooted HGTP10N120BN ON Semiconductor

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