VS-10ETF12-M3 - DIODE GEN PURP 1.2KV 10A TO220AC

Tootja arv

VS-10ETF12-M3

Sisemine osa number

ABC-VS-10ETF12-M3

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 1.2KV 10A TO220AC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

185640 Pieces

Viide Hind

~~USD 2.015~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on VS-10ETF12-M3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid VS-10ETF12-M3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : VS-10ETF12-M3

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 1.2KV 10A TO220AC

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 1200V

Praegune - keskmine puhastatud (Io) : 10A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.33V @ 10A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 310ns

Praegune - vastupidine leke @ Vr : 100µA @ 1200V

Mahtuvus @ Vr, F : -

Paigaldus tüüp : Through Hole

Pakett / kohver : TO-220-2

Tarnija seadme pakett : TO-220AC

Töötemperatuur - ristmik : -40°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : VS-1 , VS-10E

dokumendid VS-10ETF12-M3

andmelehe : VS-10ETF12-M3.pdf

Seotud tooted VS-10ETF12-M3 Vishay Semiconductor Diodes Division

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