SQD45P03-12_GE3 - MOSFET P-CH 30V 50A TO252

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SQD45P03-12_GE3

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ABC-SQD45P03-12_GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 30V 50A TO252

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

762951 Pieces

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~~USD 0.42902~~

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ABC Semiconductor on SQD45P03-12_GE3 laos müüa.

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spetsifikatsioonid SQD45P03-12_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQD45P03-12_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 30V 50A TO252

seeria : Automotive, AEC-Q101, TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 50A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 10 mOhm @ 15A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 83nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3495pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 71W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252, (D-Pak)

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQD45 , SQD45P0

dokumendid SQD45P03-12_GE3

andmelehe : SQD45P03-12_GE3.pdf

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