SI8808DB-T2-E1 - MOSFET N-CH 30V MICROFOOT

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SI8808DB-T2-E1

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ABC-SI8808DB-T2-E1

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 30V MICROFOOT

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3950093 Pieces

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~~USD 0.082865~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI8808DB-T2-E1 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI8808DB-T2-E1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI8808DB-T2-E1

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 30V MICROFOOT

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : -

Ajami pinge (max Rds sees, min Rds sees) : 1.5V, 4.5V

Rds sees (max) @ id, Vgs : 95 mOhm @ 1A, 4.5V

Vgs (th) (maksimaalselt) @ id : 900mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 10nC @ 8V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 330pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 500mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 4-Microfoot

Pakett / kohver : 4-UFBGA

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI88 , SI8808D

dokumendid SI8808DB-T2-E1

andmelehe : SI8808DB-T2-E1.pdf

Seotud tooted SI8808DB-T2-E1 Vishay Siliconix

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