NP83P06PDG-E1-AY - MOSFET P-CH 60V 83A TO-263

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NP83P06PDG-E1-AY

Sisemine osa number

ABC-NP83P06PDG-E1-AY

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET P-CH 60V 83A TO-263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

106760 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on NP83P06PDG-E1-AY laos müüa.

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spetsifikatsioonid NP83P06PDG-E1-AY

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NP83P06PDG-E1-AY

tootja : Renesas Electronics America

kirjeldus : MOSFET P-CH 60V 83A TO-263

seeria : -

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 83A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 8.8 mOhm @ 41.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 190nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 10100pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 1.8W (Ta), 150W (Tc)

Töötemperatuur : 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : NP83P , NP83P06P

dokumendid NP83P06PDG-E1-AY

andmelehe : NP83P06PDG-E1-AY.pdf

Seotud tooted NP83P06PDG-E1-AY Renesas Electronics America

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