FDD107AN06LA0 - MOSFET N-CH 60V 10.9A D-PAK

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FDD107AN06LA0

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ABC-FDD107AN06LA0

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 60V 10.9A D-PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

110632 Pieces

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ABC Semiconductor on FDD107AN06LA0 laos müüa.

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spetsifikatsioonid FDD107AN06LA0

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDD107AN06LA0

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 60V 10.9A D-PAK

seeria : PowerTrench®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 3.4A (Ta), 10.9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 91 mOhm @ 10.9A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 5.5nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 360pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 25W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252AA

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDD1 , FDD107

dokumendid FDD107AN06LA0

andmelehe : FDD107AN06LA0.pdf

Seotud tooted FDD107AN06LA0 ON Semiconductor

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