NTLJF3117PT1G - MOSFET P-CH 20V 2.3A 6-WDFN

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NTLJF3117PT1G

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ABC-NTLJF3117PT1G

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ON Semiconductor

Lühikirjeldus

MOSFET P-CH 20V 2.3A 6-WDFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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~~USD 0.09301~~

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spetsifikatsioonid NTLJF3117PT1G

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NTLJF3117PT1G

tootja : ON Semiconductor

kirjeldus : MOSFET P-CH 20V 2.3A 6-WDFN

seeria : µCool™

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 2.3A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 100 mOhm @ 2A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 6.2nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 531pF @ 10V

FET funktsioon : Schottky Diode (Isolated)

Võimsuse hajumine (max) : 710mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 6-WDFN (2x2)

Pakett / kohver : 6-WDFN Exposed Pad

kaal : -

tingimus : Uus ja originaal

seotud lingid : NTLJ , NTLJF3

dokumendid NTLJF3117PT1G

andmelehe : NTLJF3117PT1G.pdf

Seotud tooted NTLJF3117PT1G ON Semiconductor

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