SI4462DY-T1-E3 - MOSFET N-CH 200V 1.15A 8-SOIC

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SI4462DY-T1-E3

Sisemine osa number

ABC-SI4462DY-T1-E3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 200V 1.15A 8-SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

28203 Pieces

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ABC Semiconductor on SI4462DY-T1-E3 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI4462DY-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4462DY-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 200V 1.15A 8-SOIC

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 1.15A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 480 mOhm @ 1.5A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 9nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 1.3W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI44 , SI4462D

dokumendid SI4462DY-T1-E3

andmelehe : SI4462DY-T1-E3.pdf

Seotud tooted SI4462DY-T1-E3 Vishay Siliconix

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