SI4463BDY-T1-GE3 - MOSFET P-CH 20V 9.8A 8SOIC

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SI4463BDY-T1-GE3

Sisemine osa number

ABC-SI4463BDY-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 20V 9.8A 8SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

937916 Pieces

Viide Hind

~~USD 0.34899~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI4463BDY-T1-GE3 laos müüa.

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spetsifikatsioonid SI4463BDY-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4463BDY-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 20V 9.8A 8SOIC

seeria : TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 9.8A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 10V

Rds sees (max) @ id, Vgs : 11 mOhm @ 13.7A, 10V

Vgs (th) (maksimaalselt) @ id : 1.4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 56nC @ 4.5V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 1.5W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI446 , SI4463BD

dokumendid SI4463BDY-T1-GE3

andmelehe : SI4463BDY-T1-GE3.pdf

Seotud tooted SI4463BDY-T1-GE3 Vishay Siliconix

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