FDD850N10L - MOSFET N-CH 100V 15.7A DPAK-3

Tootja arv

FDD850N10L

Sisemine osa number

ABC-FDD850N10L

tootja

ON Semiconductor

Lühikirjeldus

MOSFET N-CH 100V 15.7A DPAK-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1646995 Pieces

Viide Hind

~~USD 0.19874~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FDD850N10L laos müüa.

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spetsifikatsioonid FDD850N10L

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDD850N10L

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 100V 15.7A DPAK-3

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 15.7A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 75 mOhm @ 12A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 28.9nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1465pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 50W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : DPAK

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDD , FDD85

dokumendid FDD850N10L

andmelehe : FDD850N10L.pdf

Seotud tooted FDD850N10L ON Semiconductor

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