SI4890DY-T1-E3 - MOSFET N-CH 30V 11A 8-SOIC

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SI4890DY-T1-E3

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ABC-SI4890DY-T1-E3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 30V 11A 8-SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

434763 Pieces

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~~USD 0.752875~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI4890DY-T1-E3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI4890DY-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4890DY-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 30V 11A 8-SOIC

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : -

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 12 mOhm @ 11A, 10V

Vgs (th) (maksimaalselt) @ id : 800mV @ 250µA (Min)

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 20nC @ 5V

VG (maksimaalselt) : ±25V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI48 , SI4890D

dokumendid SI4890DY-T1-E3

andmelehe : SI4890DY-T1-E3.pdf

Seotud tooted SI4890DY-T1-E3 Vishay Siliconix

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