FDP8D5N10C - FET ENGR DEV-NOT REL

Tootja arv

FDP8D5N10C

Sisemine osa number

ABC-FDP8D5N10C

tootja

ON Semiconductor

Lühikirjeldus

FET ENGR DEV-NOT REL

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

279020 Pieces

Viide Hind

~~USD 1.17307~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FDP8D5N10C laos müüa.

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spetsifikatsioonid FDP8D5N10C

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDP8D5N10C

tootja : ON Semiconductor

kirjeldus : FET ENGR DEV-NOT REL

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 76A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 8.5 mOhm @ 76A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 130µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 34nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2475pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 2.4W (Ta), 107W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220-3

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDP , FDP8D

dokumendid FDP8D5N10C

andmelehe : FDP8D5N10C.pdf

Seotud tooted FDP8D5N10C ON Semiconductor

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