IRFH3707TR2PBF - MOSFET N-CH 30V 12A PQFN33

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IRFH3707TR2PBF

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ABC-IRFH3707TR2PBF

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 30V 12A PQFN33

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

35168 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRFH3707TR2PBF laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRFH3707TR2PBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFH3707TR2PBF

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 30V 12A PQFN33

seeria : HEXFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Ta), 29A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 12.4 mOhm @ 12A, 10V

Vgs (th) (maksimaalselt) @ id : 2.35V @ 25µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.1nC @ 4.5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 755pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 2.8W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-PQFN (3x3)

Pakett / kohver : 8-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRFH , IRFH370

dokumendid IRFH3707TR2PBF

andmelehe : IRFH3707TR2PBF.pdf

Seotud tooted IRFH3707TR2PBF Infineon Technologies

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