FDD1600N10ALZ - MOSFET N CH 100V 6.8A TO252-3

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FDD1600N10ALZ

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ABC-FDD1600N10ALZ

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ON Semiconductor

Lühikirjeldus

MOSFET N CH 100V 6.8A TO252-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1946448 Pieces

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~~USD 0.168165~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FDD1600N10ALZ laos müüa.

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spetsifikatsioonid FDD1600N10ALZ

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDD1600N10ALZ

tootja : ON Semiconductor

kirjeldus : MOSFET N CH 100V 6.8A TO252-3

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 6.8A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 160 mOhm @ 3.4A, 10V

Vgs (th) (maksimaalselt) @ id : 2.8V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 3.61nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 225pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 14.9W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : DPAK

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDD1 , FDD160

dokumendid FDD1600N10ALZ

andmelehe : FDD1600N10ALZ.pdf

Seotud tooted FDD1600N10ALZ ON Semiconductor

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