SI4401FDY-T1-GE3 - MOSFET P-CHAN 40V SO-8

Tootja arv

SI4401FDY-T1-GE3

Sisemine osa number

ABC-SI4401FDY-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CHAN 40V SO-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1733473 Pieces

Viide Hind

~~USD 0.188825~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI4401FDY-T1-GE3 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI4401FDY-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4401FDY-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CHAN 40V SO-8

seeria : TrenchFET® Gen III

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 9.9A (Ta), 14A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 14.2 mOhm @ 10A, 10V

Vgs (th) (maksimaalselt) @ id : 2.3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 100nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4000pF @ 20V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 5W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI440 , SI4401FD

dokumendid SI4401FDY-T1-GE3

andmelehe : SI4401FDY-T1-GE3.pdf

Seotud tooted SI4401FDY-T1-GE3 Vishay Siliconix

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