RJK0629DPE-00#J3 - MOSFET N-CH 60V 85A LDPAK

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RJK0629DPE-00#J3

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ABC-RJK0629DPE-00#J3

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Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 60V 85A LDPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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87776 Pieces

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ABC Semiconductor on RJK0629DPE-00#J3 laos müüa.

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spetsifikatsioonid RJK0629DPE-00#J3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RJK0629DPE-00#J3

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 60V 85A LDPAK

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 85A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 4.5 mOhm @ 43A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 85nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4100pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 100W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 4-LDPAK

Pakett / kohver : SC-83

kaal : -

tingimus : Uus ja originaal

seotud lingid : RJK06 , RJK0629D

dokumendid RJK0629DPE-00#J3

andmelehe : RJK0629DPE-00#J3.pdf

Seotud tooted RJK0629DPE-00#J3 Renesas Electronics America

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