DMG4N65CTI - MOSFET N-CH 650V 4A ITO-220AB

Tootja arv

DMG4N65CTI

Sisemine osa number

ABC-DMG4N65CTI

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 650V 4A ITO-220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

533358 Pieces

Viide Hind

~~USD 0.6137~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMG4N65CTI laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMG4N65CTI

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMG4N65CTI

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 650V 4A ITO-220AB

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 4A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3 Ohm @ 2A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 13.5nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 900pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 8.35W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : ITO-220AB

Pakett / kohver : TO-220-3 Full Pack, Isolated Tab

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMG , DMG4N

dokumendid DMG4N65CTI

andmelehe : DMG4N65CTI.pdf

Seotud tooted DMG4N65CTI Diodes Incorporated

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