BSC026NE2LS5ATMA1 - MOSFET N-CH 25V 24A 8TDSON

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BSC026NE2LS5ATMA1

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ABC-BSC026NE2LS5ATMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 25V 24A 8TDSON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1267616 Pieces

Viide Hind

~~USD 0.25822~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSC026NE2LS5ATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSC026NE2LS5ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSC026NE2LS5ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 25V 24A 8TDSON

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 24A (Ta), 82A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 2.6 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 16nC @ 10V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1100pF @ 12V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 29W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TDSON-8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSC02 , BSC026NE

dokumendid BSC026NE2LS5ATMA1

andmelehe : BSC026NE2LS5ATMA1.pdf

Seotud tooted BSC026NE2LS5ATMA1 Infineon Technologies

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