SI5855DC-T1-E3 - MOSFET P-CH 20V 2.7A 1206-8

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SI5855DC-T1-E3

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ABC-SI5855DC-T1-E3

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Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 20V 2.7A 1206-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

28815 Pieces

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ABC Semiconductor on SI5855DC-T1-E3 laos müüa.

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spetsifikatsioonid SI5855DC-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI5855DC-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 20V 2.7A 1206-8

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 2.7A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 110 mOhm @ 2.7A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 7.7nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : Schottky Diode (Isolated)

Võimsuse hajumine (max) : 1.1W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 1206-8 ChipFET™

Pakett / kohver : 8-SMD, Flat Lead

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI58 , SI5855D

dokumendid SI5855DC-T1-E3

andmelehe : SI5855DC-T1-E3.pdf

Seotud tooted SI5855DC-T1-E3 Vishay Siliconix

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