SIHP18N60E-GE3 - MOSFET N-CH 600V 18A TO220AB

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SIHP18N60E-GE3

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ABC-SIHP18N60E-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 600V 18A TO220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

379547 Pieces

Viide Hind

~~USD 0.8624~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIHP18N60E-GE3 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIHP18N60E-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHP18N60E-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 600V 18A TO220AB

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 18A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 202 mOhm @ 9A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 92nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1640pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 179W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220AB

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHP , SIHP18N

dokumendid SIHP18N60E-GE3

andmelehe : SIHP18N60E-GE3.pdf

Seotud tooted SIHP18N60E-GE3 Vishay Siliconix

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