C2M0280120D - MOSFET N-CH 1200V 10A TO-247-3

Tootja arv

C2M0280120D

Sisemine osa number

ABC-C2M0280120D

tootja

Cree/Wolfspeed

Lühikirjeldus

MOSFET N-CH 1200V 10A TO-247-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

131248 Pieces

Viide Hind

~~USD 2.85~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on C2M0280120D laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid C2M0280120D

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : C2M0280120D

tootja : Cree/Wolfspeed

kirjeldus : MOSFET N-CH 1200V 10A TO-247-3

seeria : Z-FET™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : SiCFET (Silicon Carbide)

Tühjendage toitepingele (Vdss) : 1200V

Praegune - pidev äravool (id) @ 25 ° C : 10A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 20V

Rds sees (max) @ id, Vgs : 370 mOhm @ 6A, 20V

Vgs (th) (maksimaalselt) @ id : 2.8V @ 1.25mA (Typ)

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 20.4nC @ 20V

VG (maksimaalselt) : +25V, -10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 259pF @ 1000V

FET funktsioon : -

Võimsuse hajumine (max) : 62.5W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-247-3

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : C2M , C2M02

dokumendid C2M0280120D

andmelehe : C2M0280120D.pdf

Seotud tooted C2M0280120D Cree/Wolfspeed

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