TK8S06K3L(T6L1,NQ) - MOSFET N-CH 60V 8A DPAK-3

Tootja arv

TK8S06K3L(T6L1,NQ)

Sisemine osa number

ABC-TK8S06K3L(T6L1,NQ)

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N-CH 60V 8A DPAK-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1416982 Pieces

Viide Hind

~~USD 0.231~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TK8S06K3L(T6L1,NQ) laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid TK8S06K3L(T6L1,NQ)

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TK8S06K3L(T6L1,NQ)

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N-CH 60V 8A DPAK-3

seeria : U-MOSIV

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 8A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 54 mOhm @ 4A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 10nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 400pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 25W (Tc)

Töötemperatuur : 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : DPAK+

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : TK8S06 , TK8S06K3L

dokumendid TK8S06K3L(T6L1,NQ)

andmelehe : TK8S06K3L(T6L1,NQ).pdf

Seotud tooted TK8S06K3L(T6L1,NQ) Toshiba Semiconductor and Storage

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