EPC2110ENGRT - GAN TRANS 2N-CH 120V BUMPED DIE

Tootja arv

EPC2110ENGRT

Sisemine osa number

ABC-EPC2110ENGRT

tootja

EPC

Lühikirjeldus

GAN TRANS 2N-CH 120V BUMPED DIE

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

640549 Pieces

Viide Hind

~~USD 0.511~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on EPC2110ENGRT laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid EPC2110ENGRT

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : EPC2110ENGRT

tootja : EPC

kirjeldus : GAN TRANS 2N-CH 120V BUMPED DIE

seeria : eGaN®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual) Common Source

FET funktsioon : GaNFET (Gallium Nitride)

Tühjendage toitepingele (Vdss) : 120V

Praegune - pidev äravool (id) @ 25 ° C : 3.4A

Rds sees (max) @ id, Vgs : 60 mOhm @ 4A, 5V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 700µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 0.8nC @ 5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 80pF @ 60V

Võimsus - max : -

Töötemperatuur : -40°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : Die

Tarnija seadme pakett : Die

kaal : -

tingimus : Uus ja originaal

seotud lingid : EPC2 , EPC211

dokumendid EPC2110ENGRT

andmelehe : EPC2110ENGRT.pdf

Seotud tooted EPC2110ENGRT EPC

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