NP80N06PLG-E1B-AY - MOSFET N-CH 60V 80A TO-263

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NP80N06PLG-E1B-AY

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ABC-NP80N06PLG-E1B-AY

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Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 60V 80A TO-263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

51616 Pieces

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ABC Semiconductor on NP80N06PLG-E1B-AY laos müüa.

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spetsifikatsioonid NP80N06PLG-E1B-AY

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NP80N06PLG-E1B-AY

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 60V 80A TO-263

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 80A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 8.3 mOhm @ 40A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 128nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6900pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1.8W (Ta), 115W (Tc)

Töötemperatuur : 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : NP80N , NP80N06P

dokumendid NP80N06PLG-E1B-AY

andmelehe : NP80N06PLG-E1B-AY.pdf

Seotud tooted NP80N06PLG-E1B-AY Renesas Electronics America

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