APT11N80BC3G - MOSFET N-CH 800V 11A TO-247

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APT11N80BC3G

Sisemine osa number

ABC-APT11N80BC3G

tootja

Microsemi Corporation

Lühikirjeldus

MOSFET N-CH 800V 11A TO-247

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

123648 Pieces

Viide Hind

~~USD 3.025~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on APT11N80BC3G laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid APT11N80BC3G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : APT11N80BC3G

tootja : Microsemi Corporation

kirjeldus : MOSFET N-CH 800V 11A TO-247

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 11A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 450 mOhm @ 7.1A, 10V

Vgs (th) (maksimaalselt) @ id : 3.9V @ 680µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 60nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1585pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 156W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-247 [B]

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : APT1 , APT11N

dokumendid APT11N80BC3G

andmelehe : APT11N80BC3G.pdf

Seotud tooted APT11N80BC3G Microsemi Corporation

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