NCV5701BDR2G - HIGH CURRENT IGBT GATE DR

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NCV5701BDR2G

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ABC-NCV5701BDR2G

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ON Semiconductor

Lühikirjeldus

HIGH CURRENT IGBT GATE DR

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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732564 Pieces

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~~USD 0.4968~~

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ABC Semiconductor on NCV5701BDR2G laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid NCV5701BDR2G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NCV5701BDR2G

tootja : ON Semiconductor

kirjeldus : HIGH CURRENT IGBT GATE DR

seeria : *

Osa olek : Active

Ajendatud konfiguratsioon : -

Kanali tüüp : -

Autojuhtide arv : -

Värava tüüp : -

Pinge - toide : -

Loogikapinge - VIL, VIH : -

Praegune - tippvõimsus (allikas, valamu) : -

Sisendi tüüp : -

Kõrge külgpinge - max (alglaadimine) : -

Tõusu / languse aeg (tüüp) : -

Töötemperatuur : -

Paigaldus tüüp : -

Pakett / kohver : -

Tarnija seadme pakett : -

kaal : -

tingimus : Uus ja originaal

seotud lingid : NCV5 , NCV570

dokumendid NCV5701BDR2G

andmelehe : NCV5701BDR2G.pdf

Seotud tooted NCV5701BDR2G ON Semiconductor

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