BSZ097N10NS5ATMA1 - MOSFET N-CH 100V 40A TSDSON-8

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BSZ097N10NS5ATMA1

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ABC-BSZ097N10NS5ATMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 40A TSDSON-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

896553 Pieces

Viide Hind

~~USD 0.36509~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSZ097N10NS5ATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSZ097N10NS5ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSZ097N10NS5ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 40A TSDSON-8

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 8A (Ta), 40A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 9.7 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 3.8V @ 36µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 28nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2080pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 2.1W (Ta), 69W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TSDSON-8-FL

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSZ09 , BSZ097N1

dokumendid BSZ097N10NS5ATMA1

andmelehe : BSZ097N10NS5ATMA1.pdf

Seotud tooted BSZ097N10NS5ATMA1 Infineon Technologies

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