SI5509DC-T1-GE3 - MOSFET N/P-CH 20V 6.1A 1206-8

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SI5509DC-T1-GE3

Sisemine osa number

ABC-SI5509DC-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N/P-CH 20V 6.1A 1206-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

51662 Pieces

Viide Hind

~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI5509DC-T1-GE3 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI5509DC-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI5509DC-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N/P-CH 20V 6.1A 1206-8

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : N and P-Channel

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 6.1A, 4.8A

Rds sees (max) @ id, Vgs : 52 mOhm @ 5A, 4.5V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 6.6nC @ 5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 455pF @ 10V

Võimsus - max : 4.5W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SMD, Flat Lead

Tarnija seadme pakett : 1206-8 ChipFET™

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI550 , SI5509D

dokumendid SI5509DC-T1-GE3

andmelehe : SI5509DC-T1-GE3.pdf

Seotud tooted SI5509DC-T1-GE3 Vishay Siliconix

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