IPP023NE7N3GXKSA1 - MOSFET N-CH 75V 120A TO220

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IPP023NE7N3GXKSA1

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ABC-IPP023NE7N3GXKSA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 75V 120A TO220

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

116160 Pieces

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~~USD 3.22~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IPP023NE7N3GXKSA1 laos müüa.

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spetsifikatsioonid IPP023NE7N3GXKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPP023NE7N3GXKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 75V 120A TO220

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 75V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.3 mOhm @ 100A, 10V

Vgs (th) (maksimaalselt) @ id : 3.8V @ 273µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 206nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 14400pF @ 37.5V

FET funktsioon : -

Võimsuse hajumine (max) : 300W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO220-3-1

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPP02 , IPP023NE

dokumendid IPP023NE7N3GXKSA1

andmelehe : IPP023NE7N3GXKSA1.pdf

Seotud tooted IPP023NE7N3GXKSA1 Infineon Technologies

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