STH275N8F7-2AG - MOSFET N-CH 80V 180A H2PAK-2

Tootja arv

STH275N8F7-2AG

Sisemine osa number

ABC-STH275N8F7-2AG

tootja

STMicroelectronics

Lühikirjeldus

MOSFET N-CH 80V 180A H2PAK-2

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

230734 Pieces

Viide Hind

~~USD 1.4186~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on STH275N8F7-2AG laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid STH275N8F7-2AG

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : STH275N8F7-2AG

tootja : STMicroelectronics

kirjeldus : MOSFET N-CH 80V 180A H2PAK-2

seeria : Automotive, AEC-Q101, STripFET™ F7

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 180A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.1 mOhm @ 90A, 10V

Vgs (th) (maksimaalselt) @ id : 4.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 193nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 13600pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 315W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : H2Pak-2

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : STH2 , STH275N

dokumendid STH275N8F7-2AG

andmelehe : STH275N8F7-2AG.pdf

Seotud tooted STH275N8F7-2AG STMicroelectronics

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