RQ3E120BNTB - MOSFET N-CH 30V 12A HSMT8

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RQ3E120BNTB

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ABC-RQ3E120BNTB

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Rohm Semiconductor

Lühikirjeldus

MOSFET N-CH 30V 12A HSMT8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

4354161 Pieces

Viide Hind

~~USD 0.075175~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RQ3E120BNTB laos müüa.

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spetsifikatsioonid RQ3E120BNTB

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RQ3E120BNTB

tootja : Rohm Semiconductor

kirjeldus : MOSFET N-CH 30V 12A HSMT8

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 9.3 mOhm @ 12A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 29nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1500pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 2W (Ta)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-HSMT (3.2x3)

Pakett / kohver : 8-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : RQ3 , RQ3E1

dokumendid RQ3E120BNTB

andmelehe : RQ3E120BNTB.pdf

Seotud tooted RQ3E120BNTB Rohm Semiconductor

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