SI4590DY-T1-GE3 - MOSFET N/P CHAN 100V SO8 DUAL

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SI4590DY-T1-GE3

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ABC-SI4590DY-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N/P CHAN 100V SO8 DUAL

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1595965 Pieces

Viide Hind

~~USD 0.205095~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI4590DY-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI4590DY-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4590DY-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N/P CHAN 100V SO8 DUAL

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N and P-Channel

FET funktsioon : -

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 3.4A, 2.8A

Rds sees (max) @ id, Vgs : 57 mOhm @ 2A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11.5nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 360pF @ 50V

Võimsus - max : 2.4W, 3.4W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : 8-SO

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI459 , SI4590D

dokumendid SI4590DY-T1-GE3

andmelehe : SI4590DY-T1-GE3.pdf

Seotud tooted SI4590DY-T1-GE3 Vishay Siliconix

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