SI1302DL-T1-GE3 - MOSFET N-CH 30V 600MA SC-70-3

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SI1302DL-T1-GE3

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ABC-SI1302DL-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 30V 600MA SC-70-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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3817639 Pieces

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~~USD 0.08574~~

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ABC Semiconductor on SI1302DL-T1-GE3 laos müüa.

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spetsifikatsioonid SI1302DL-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1302DL-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 30V 600MA SC-70-3

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 600mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 480 mOhm @ 600mA, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 1.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 280mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-70-3

Pakett / kohver : SC-70, SOT-323

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI130 , SI1302D

dokumendid SI1302DL-T1-GE3

andmelehe : SI1302DL-T1-GE3.pdf

Seotud tooted SI1302DL-T1-GE3 Vishay Siliconix

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