FDB86566-F085 - MOSFET N-CH 60V 110A D2PAK

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FDB86566-F085

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ABC-FDB86566-F085

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 60V 110A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

541968 Pieces

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~~USD 0.603955~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FDB86566-F085 laos müüa.

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spetsifikatsioonid FDB86566-F085

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDB86566-F085

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 60V 110A D2PAK

seeria : Automotive, AEC-Q101, PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 110A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.7 mOhm @ 80A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 110nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6655pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 176W (Tj)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263AB)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDB8 , FDB865

dokumendid FDB86566-F085

andmelehe : FDB86566-F085.pdf

Seotud tooted FDB86566-F085 ON Semiconductor

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