SI4936BDY-T1-E3 - MOSFET 2N-CH 30V 6.9A 8-SOIC

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SI4936BDY-T1-E3

Sisemine osa number

ABC-SI4936BDY-T1-E3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2N-CH 30V 6.9A 8-SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1810466 Pieces

Viide Hind

~~USD 0.180795~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI4936BDY-T1-E3 laos müüa.

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spetsifikatsioonid SI4936BDY-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4936BDY-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2N-CH 30V 6.9A 8-SOIC

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 6.9A

Rds sees (max) @ id, Vgs : 35 mOhm @ 5.9A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 15nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 530pF @ 15V

Võimsus - max : 2.8W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : 8-SO

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI493 , SI4936B

dokumendid SI4936BDY-T1-E3

andmelehe : SI4936BDY-T1-E3.pdf

Seotud tooted SI4936BDY-T1-E3 Vishay Siliconix

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