DMN4800LSSQ-13 - MOSFET N-CH 30V 8.6A 8-SO

Tootja arv

DMN4800LSSQ-13

Sisemine osa number

ABC-DMN4800LSSQ-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 30V 8.6A 8-SO

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2988167 Pieces

Viide Hind

~~USD 0.10954~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMN4800LSSQ-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMN4800LSSQ-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN4800LSSQ-13

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 30V 8.6A 8-SO

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 8.6A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 14 mOhm @ 9A, 10V

Vgs (th) (maksimaalselt) @ id : 1.6V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.7nC @ 5V

VG (maksimaalselt) : ±25V

Sisendmahtuvus (Ciss) (Max) @ Vds : 798pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 1.46W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN4 , DMN4800

dokumendid DMN4800LSSQ-13

andmelehe : DMN4800LSSQ-13.pdf

Seotud tooted DMN4800LSSQ-13 Diodes Incorporated

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