1N4448,113 - DIODE GEN PURP 100V 200MA ALF2

Tootja arv

1N4448,113

Sisemine osa number

ABC-1N4448,113

tootja

NXP USA Inc.

Lühikirjeldus

DIODE GEN PURP 100V 200MA ALF2

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

112168 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on 1N4448,113 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid 1N4448,113

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : 1N4448,113

tootja : NXP USA Inc.

kirjeldus : DIODE GEN PURP 100V 200MA ALF2

seeria : -

Osa olek : Obsolete

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 100V

Praegune - keskmine puhastatud (Io) : 200mA (DC)

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 100mA

Kiirus : Small Signal =< 200mA (Io), Any Speed

Vastupidine taastumisaeg (trr) : 4ns

Praegune - vastupidine leke @ Vr : 25nA @ 20V

Mahtuvus @ Vr, F : 4pF @ 0V, 1MHz

Paigaldus tüüp : Through Hole

Pakett / kohver : DO-204AH, DO-35, Axial

Tarnija seadme pakett : ALF2

Töötemperatuur - ristmik : 200°C (Max)

kaal : -

tingimus : Uus ja originaal

seotud lingid : 1N4 , 1N444

dokumendid 1N4448,113

andmelehe : 1N4448,113.pdf

Seotud tooted 1N4448,113 NXP USA Inc.

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