IXFY4N60P3 - MOSFET N-CH 600V 4A TO-252

Tootja arv

IXFY4N60P3

Sisemine osa number

ABC-IXFY4N60P3

tootja

IXYS

Lühikirjeldus

MOSFET N-CH 600V 4A TO-252

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

406602 Pieces

Viide Hind

~~USD 0.805~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXFY4N60P3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXFY4N60P3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXFY4N60P3

tootja : IXYS

kirjeldus : MOSFET N-CH 600V 4A TO-252

seeria : HiPerFET™, Polar3™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 4A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.2 Ohm @ 2A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 6.9nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 365pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 114W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXF , IXFY4

dokumendid IXFY4N60P3

andmelehe : IXFY4N60P3.pdf

Seotud tooted IXFY4N60P3 IXYS

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