PSMN8R5-108ESQ - MOSFET N-CH 108V 100A I2PAK

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PSMN8R5-108ESQ

Sisemine osa number

ABC-PSMN8R5-108ESQ

tootja

NXP USA Inc.

Lühikirjeldus

MOSFET N-CH 108V 100A I2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

46150 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on PSMN8R5-108ESQ laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid PSMN8R5-108ESQ

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : PSMN8R5-108ESQ

tootja : NXP USA Inc.

kirjeldus : MOSFET N-CH 108V 100A I2PAK

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 108V

Praegune - pidev äravool (id) @ 25 ° C : 100A (Tj)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 8.5 mOhm @ 25A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 111nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 5512pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 263W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : I2PAK

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : PSMN , PSMN8R5

dokumendid PSMN8R5-108ESQ

andmelehe : PSMN8R5-108ESQ.pdf

Seotud tooted PSMN8R5-108ESQ NXP USA Inc.

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