IPA093N06N3GXKSA1 - MOSFET N-CH 60V 43A TO220-3-31

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IPA093N06N3GXKSA1

Sisemine osa number

ABC-IPA093N06N3GXKSA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 60V 43A TO220-3-31

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

536585 Pieces

Viide Hind

~~USD 0.61~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IPA093N06N3GXKSA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPA093N06N3GXKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPA093N06N3GXKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 60V 43A TO220-3-31

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 43A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 9.3 mOhm @ 40A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 34µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 48nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3900pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 33W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO220-3-31 Full Pack

Pakett / kohver : TO-220-3 Full Pack

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPA09 , IPA093N0

dokumendid IPA093N06N3GXKSA1

andmelehe : IPA093N06N3GXKSA1.pdf

Seotud tooted IPA093N06N3GXKSA1 Infineon Technologies

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