FQD17N08LTM - MOSFET N-CH 80V 12.9A DPAK

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FQD17N08LTM

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ABC-FQD17N08LTM

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 80V 12.9A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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1474494 Pieces

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~~USD 0.22199~~

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ABC Semiconductor on FQD17N08LTM laos müüa.

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spetsifikatsioonid FQD17N08LTM

kvaliteedi tagamise : 365 päeva garantii

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FQD17N08LTM

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 80V 12.9A DPAK

seeria : QFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 12.9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 100 mOhm @ 6.45A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11.5nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 520pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 40W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252, (D-Pak)

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQD , FQD17

dokumendid FQD17N08LTM

andmelehe : FQD17N08LTM.pdf

Seotud tooted FQD17N08LTM ON Semiconductor

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