HGT1S10N120BNST - IGBT 1200V 35A 298W TO263AB

Tootja arv

HGT1S10N120BNST

Sisemine osa number

ABC-HGT1S10N120BNST

tootja

ON Semiconductor

Lühikirjeldus

IGBT 1200V 35A 298W TO263AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

363083 Pieces

Viide Hind

~~USD 0.90148~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on HGT1S10N120BNST laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid HGT1S10N120BNST

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : HGT1S10N120BNST

tootja : ON Semiconductor

kirjeldus : IGBT 1200V 35A 298W TO263AB

seeria : -

Osa olek : Active

IGBT tüüp : NPT

Pinge - kollektori emitteri jaotus (max) : 1200V

Praegune - koguja (Ic) (maksimaalselt) : 35A

Praegune - koguja impulss (Icm) : 80A

Vce (sees) (max) @ Vge, Ic : 2.7V @ 15V, 10A

Võimsus - max : 298W

Energia vahetamine : 320µJ (on), 800µJ (off)

Sisendi tüüp : Standard

Värava laadimine : 100nC

Td (sisse / välja) @ 25 ° C : 23ns/165ns

Testi seisund : 960V, 10A, 10 Ohm, 15V

Vastupidine taastumisaeg (trr) : -

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Tarnija seadme pakett : TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : HGT1S , HGT1S10

dokumendid HGT1S10N120BNST

andmelehe : HGT1S10N120BNST.pdf

Seotud tooted HGT1S10N120BNST ON Semiconductor

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