1N8026-GA - DIODE SILICON 1.2KV 8A TO257

Tootja arv

1N8026-GA

Sisemine osa number

ABC-1N8026-GA

tootja

GeneSiC Semiconductor

Lühikirjeldus

DIODE SILICON 1.2KV 8A TO257

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

59368 Pieces

Viide Hind

~~USD 104.05~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on 1N8026-GA laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid 1N8026-GA

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : 1N8026-GA

tootja : GeneSiC Semiconductor

kirjeldus : DIODE SILICON 1.2KV 8A TO257

seeria : -

Osa olek : Obsolete

Dioodi tüüp : Silicon Carbide Schottky

Pinge - tagurpidi alalisvool (Vr) (max) : 1200V

Praegune - keskmine puhastatud (Io) : 8A (DC)

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.6V @ 2.5A

Kiirus : No Recovery Time > 500mA (Io)

Vastupidine taastumisaeg (trr) : 0ns

Praegune - vastupidine leke @ Vr : 10µA @ 1200V

Mahtuvus @ Vr, F : 237pF @ 1V, 1MHz

Paigaldus tüüp : Through Hole

Pakett / kohver : TO-257-3

Tarnija seadme pakett : TO-257

Töötemperatuur - ristmik : -55°C ~ 250°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : 1N8 , 1N80

dokumendid 1N8026-GA

andmelehe : 1N8026-GA.pdf

Seotud tooted 1N8026-GA GeneSiC Semiconductor

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