IPI65R190CFDXKSA1 - MOSFET N-CH 650V 17.5A TO262

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IPI65R190CFDXKSA1

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ABC-IPI65R190CFDXKSA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 650V 17.5A TO262

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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323008 Pieces

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~~USD 1.01334~~

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ABC Semiconductor on IPI65R190CFDXKSA1 laos müüa.

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spetsifikatsioonid IPI65R190CFDXKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPI65R190CFDXKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 650V 17.5A TO262

seeria : CoolMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 17.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 190 mOhm @ 7.3A, 10V

Vgs (th) (maksimaalselt) @ id : 4.5V @ 730µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 68nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1850pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 151W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO262-3

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPI65 , IPI65R19

dokumendid IPI65R190CFDXKSA1

andmelehe : IPI65R190CFDXKSA1.pdf

Seotud tooted IPI65R190CFDXKSA1 Infineon Technologies

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